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Samsung 750 EVO 500 GB

500 GB
Capacity
Samsung MGX
Controller
MLC
Flash
SATA 6 Gbps
Interface
2.5"
Form Factor
Package
Tom's Hardware
Package
PCB Front
Tom's Hardware
PCB Front
PCB Back
Tom's Hardware
PCB Back
DRAM
Tom's Hardware
DRAM
Flash
Tom's Hardware
Flash
SSD Controller
Controller
NAND Die
NAND Die
The Samsung 750 EVO was a solid-state drive in the 2.5" form factor, launched in October 2016, that is no longer in production. It was available in capacities ranging from 120 GB to 500 GB. This page reports specifications for the 500 GB variant. With the rest of the system, the Samsung 750 EVO interfaces using a SATA 6 Gbps connection. The SSD controller is the MGX (S4LN062X01) from Samsung, a DRAM cache chip is available. Samsung has installed MLC NAND flash on the 750 EVO, the flash chips are made by Samsung. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are absorbed more quickly. The 750 EVO is rated for sequential read speeds of up to 540 MB/s and 520 MB/s write; random IO reaches 98K IOPS for read and 88K for writes.
At its launch, the SSD was priced at 270 USD. The warranty length is set to three years, which is above average, but shorter than the five years offered by many other vendors. Samsung guarantees an endurance rating of 100 TBW, a relatively low value compared to other SSDs.

Solid-State-Drive

Capacity: 500 GB
Variants: 120 GB 250 GB 500 GB
Overprovisioning: 46.3 GB / 10.0 %
Production: End-of-life
Released: Oct 2016
Price at Launch: 270 USD
Part Number: MZ-750500BW
Market: Consumer

Physical

Form Factor: 2.5"
Interface: SATA 6 Gbps
Protocol: AHCI
Power Draw: 0.05 W (Idle)
Unknown (Avg)
3.7 W (Max)

Controller

Manufacturer: Samsung
Name: MGX (S4LN062X01)
Architecture: ARM 32-bit Cortex R4
Core Count: Dual-Core
Frequency: 550 MHz
Foundry: Samsung
Process: 32 nm
Flash Channels: 8
Chip Enables: 8

NAND Flash

Manufacturer: Samsung
Name: 16nm MLC
Part Number: K90KGY8S7D-CCK0
Type: MLC
Technology: Planar
Speed: 800 MT/s
Capacity: 4 chips @ 1 Tbit
Topology: Floating Gate
Process: 14 nm
Dies per Chip: 8 dies @ 128 Gbit
Planes per Die: 4
Read Time (tR): 120 µs
Program Time (tProg): 640 µs
Block Erase Time (tBERS): 3.5 ms
Die Write Speed: 50 MB/s
Page Size: 16 KB
Block Size: 300 Pages
Plane Size: 3526 Blocks

DRAM Cache

Type: DDR3
Name: Samsung K4E4E164EE-SGCE
Capacity: 512 MB
(1x 512 MB)
Organization: 4Gx16

Performance

Sequential Read: 540 MB/s
Sequential Write: 520 MB/s
Random Read: 98,000 IOPS
Random Write: 88,000 IOPS
Endurance: 100 TBW
Warranty: 3 Years
MTBF: 1.5 Million Hours
Drive Writes Per Day (DWPD): 0.2
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-256
RGB Lighting: No
PS5 Compatible: No

Reviews

Notes

Controller:

Could be 4 or 8 Channels

NAND Die:

Maximum Read Time (tR): 120µs
Maximum Program Time (tPROG): 5000µs
Maximum Block Erase Time (tBERS): 10ms

May 2nd, 2024 03:04 EDT change timezone

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