Capacity: | 500 GB |
---|---|
Variants: | 120 GB 250 GB 500 GB |
Overprovisioning: | 46.3 GB / 10.0 % |
Production: | End-of-life |
Released: | Oct 2016 |
Price at Launch: | 270 USD |
Part Number: | MZ-750500BW |
Market: | Consumer |
Form Factor: | 2.5" |
---|---|
Interface: | SATA 6 Gbps |
Protocol: | AHCI |
Power Draw: |
0.05 W (Idle) Unknown (Avg) 3.7 W (Max) |
Manufacturer: | Samsung |
---|---|
Name: | MGX (S4LN062X01) |
Architecture: | ARM 32-bit Cortex R4 |
Core Count: | Dual-Core |
Frequency: | 550 MHz |
Foundry: | Samsung |
Process: | 32 nm |
Flash Channels: | 8 |
Chip Enables: | 8 |
Manufacturer: | Samsung |
---|---|
Name: | 16nm MLC |
Part Number: | K90KGY8S7D-CCK0 |
Type: | MLC |
Technology: | Planar |
Speed: | 800 MT/s |
Capacity: | 4 chips @ 1 Tbit |
Topology: | Floating Gate |
Process: | 14 nm |
Dies per Chip: | 8 dies @ 128 Gbit |
Planes per Die: | 4 |
Read Time (tR): | 120 µs |
Program Time (tProg): | 640 µs |
Block Erase Time (tBERS): | 3.5 ms |
Die Write Speed: | 50 MB/s |
Page Size: | 16 KB |
Block Size: | 300 Pages |
Plane Size: | 3526 Blocks |
Type: | DDR3 |
---|---|
Name: | Samsung K4E4E164EE-SGCE |
Capacity: |
512 MB
(1x 512 MB) |
Organization: | 4Gx16 |
Sequential Read: | 540 MB/s |
---|---|
Sequential Write: | 520 MB/s |
Random Read: | 98,000 IOPS |
Random Write: | 88,000 IOPS |
Endurance: | 100 TBW |
Warranty: | 3 Years |
MTBF: | 1.5 Million Hours |
Drive Writes Per Day (DWPD): | 0.2 |
SLC Write Cache: | Yes |
TRIM: | Yes |
---|---|
SMART: | Yes |
Power Loss Protection: | No |
Encryption: |
|
RGB Lighting: | No |
PS5 Compatible: | No |
Controller:Could be 4 or 8 Channels NAND Die:Maximum Read Time (tR): 120µs |