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Samsung 850 PRO 512 GB

512 GB
Capacity
Samsung MEX
Controller
pMLC (TLC)
Flash
SATA 6 Gbps
Interface
2.5"
Form Factor
Front
Back
Back
Package
Package
PCB Front
TweakTown
PCB Front
PCB Back
TweakTown
PCB Back
DRAM
TweakTown
DRAM
Flash
TweakTown
Flash
SSD Controller
Controller
The Samsung 850 PRO was a solid-state drive in the 2.5" form factor, launched on July 1st, 2014, that is no longer in production. It was available in capacities ranging from 128 GB to 2 TB. This page reports specifications for the 512 GB variant. With the rest of the system, the Samsung 850 PRO interfaces using a SATA 6 Gbps connection. The SSD controller is the MEX (S4LN045X01) from Samsung, a DRAM cache chip is available. Samsung has installed 32-layer pMLC (TLC) NAND flash on the 850 PRO, the flash chips are made by Samsung. The 850 PRO is rated for sequential read speeds of up to 550 MB/s and 520 MB/s write; random IOPS reach up to 100K for reads and 90K for writes.
At its launch, the SSD was priced at 430 USD. The warranty length is set to 10 years, which is a very long warranty, better than most other drives on the market. Samsung guarantees an endurance rating of 300 TBW, a relatively low value compared to other SSDs.

Solid-State-Drive

Capacity: 512 GB
Variants: 128 GB 256 GB 512 GB 1 TB 2 TB
Overprovisioning: 35.2 GB / 7.4 %
Production: End-of-life
Released: Jul 1st, 2014
Price at Launch: 430 USD
Part Number: MZ-7KE512
Market: Consumer

Physical

Form Factor: 2.5"
Interface: SATA 6 Gbps
Protocol: AHCI
Power Draw: 0.04 W (Idle)
3.2 W (Avg)
3.5 W (Max)

Controller

Manufacturer: Samsung
Name: MEX (S4LN045X01)
Architecture: ARM 32-bit Cortex R4
Core Count: Triple-Core
Frequency: 400 MHz
Foundry: Samsung
Process: 32 nm
Flash Channels: 8
Chip Enables: 8
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Samsung
Name: V-NAND V2
Part Number: K9PRGY8S7M-CCK0
Type: pMLC (TLC)
Technology: 32-layer
Speed: 1000 MT/s
Capacity: 4 chips @ 688 Gbit
Toggle: 3.0
Topology: Charge Trap
Process: 40 nm
Die Size: 82 mm²
(1.0 Gbit/mm²)
Dies per Chip: 8 dies @ 86 Gbit
Planes per Die: 2
Decks per Die: 1
Word Lines: 39 per NAND String
82.1% Vertical Efficiency
Endurance:
(up to)		 6000 P/E Cycles
(30000 in SLC Mode)
Page Size: 16 KB

DRAM Cache

Type: LPDDR2-1066
Name: SAMSUNG K4P4G324EQ-FGC2
Capacity: 512 MB
(1x 512 MB)
Organization: 4Gx16

Performance

Sequential Read: 550 MB/s
Sequential Write: 520 MB/s
Random Read: 100,000 IOPS
Random Write: 90,000 IOPS
Endurance: 300 TBW
Warranty: 10 Years
MTBF: 2.0 Million Hours
Drive Writes Per Day (DWPD): 0.2
Write Cache: N/A

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-128
  • AES-256
  • TCG Opal
RGB Lighting: No
PS5 Compatible: No

Reviews

Notes

Drive:

Die Package configuration: 4 x 8 x 86Gbit | 4 x 4 x 86Gbit

The SSD has 2 diffente NAND Flash models:
4x Samsung K9PRGY8S7M-CCK0 (8x 86Gb dies)
4x Samsung K9HQGY8S5M-CCK0 (4x 86Gb dies)
May 6th, 2024 19:47 EDT change timezone

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